Field-effect transistors on rubrene single crystals with parylene gate insulator
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- 17 March 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (11) , 1739-1741
- https://doi.org/10.1063/1.1560869
Abstract
We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed.Comment: 3 pageKeywords
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