Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator

Preprint

24 October 2002

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0210555

Abstract

We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed.

Keywords

FIELD EFFECT TRANSISTORS
RUBRENE SINGLE CRYSTALS
POLYMER FILM
TEMPERATURE
TRANSISTORS
PARYLENE
MOBILITY

All Related Versions

Version 1, 2002-10-24, ArXiv
Published version: Applied Physics Letters, 82 (11), 1739.

This publication has 0 references indexed in Scilit: