Numerical simulation of tetracene light-emitting transistors: A detailed balance of exciton processes
- 20 September 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (12) , 2405-2407
- https://doi.org/10.1063/1.1792372
Abstract
We assess the possibility to use an ambipolar organic light-emitting transistor structure as gain medium for an electrically pumped laser. Singlet and triplet continuity equations are solved together with Poissons and drift-diffusion equations in two dimensions. The solution allows for a detailed balance between the exciton decay, quenching and generation mechanisms. Simulations of a tetracene light-emitting transistor show that triplets are most dominant in quenching singlets. Singlet–triplet quenching can ultimately prevent pure tetracene crystals or films—when provided with a realistic optical feedback structure, to reach the threshold for stimulated emission.Keywords
This publication has 9 references indexed in Scilit:
- Light-emitting field-effect transistor: simple model and underlying functional mechanismsPublished by SPIE-Intl Soc Optical Eng ,2003
- Light-Emitting Field-Effect Transistor Based on a Tetracene Thin FilmPhysical Review Letters, 2003
- Solution-processed ambipolar organic field-effect transistors and invertersNature Materials, 2003
- Prospects for electrically pumped organic lasersPhysical Review B, 2002
- Organic semiconductors: A theoretical characterization of the basic parameters governing charge transportProceedings of the National Academy of Sciences, 2002
- An Organic Solid State Injection LaserScience, 2000
- Organic Heterostructure Field-Effect TransistorsScience, 1995
- Charge Carrier Mobility in Tetracene Single CrystalsMolecular Crystals and Liquid Crystals, 1972
- Diffusion Length and Lifetime of Triplet Excitons and Crystal Absorption Coefficient in Tetracene Determined from Photocurrent MeasurementsPhysica Status Solidi (b), 1969