A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 341-344
- https://doi.org/10.1109/gaas.1993.394438
Abstract
The authors have developed a reproducible, high yield and high performance power HEMT Ka-band MMIC production process based on pseudomorphic AlGaAs/InGaAs/GaAs HEMTs. The details of the fabrication process and Ka-band MMIC power amplifier performance from 60 wafers are presented. State-of-the-art power performance have been achieved on both devices and MMICs. Single-stage MMICs with 400 /spl mu/m devices have demonstrated output power of 240 mW (0.6 W/mm) at 37 GHz with a power gain of 7.8 dB and power-added efficiency of 40%. The Ka-band MMIC power amplifiers have demonstrated output power of 1.3 W, 9 dB gain and 24% power added efficiency. Furthermore, the power MMIC HEMT process demonstrated a RF MMIC circuit yield of 25.8% for a total of 6936 possible chips from 60 wafers.<>Keywords
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