Comparison of self-heating effects in bulk-silicon and SOI high-voltage devices

This publication has 7 references indexed in Scilit:

• Thermal behaviour of lateral power devices on SOI substrates
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Realization of high breakdown voltage (<700 V) in thin SOI devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Measurement and modeling of self-heating in SOI nMOSFET's
  IEEE Transactions on Electron Devices, 1994
• The effect of temperature on lateral DMOS transistors in a power IC technology
  IEEE Transactions on Electron Devices, 1992
• Unified field-effect transistor theory including velocity saturation
  IEEE Journal of Solid-State Circuits, 1980
• Selective ion implantation to reduce power consumption in MOS integrated circuits
  IEEE Transactions on Electron Devices, 1978
• A review of some charge transport properties of silicon
  Solid-State Electronics, 1977