Metal-Oxide-Semiconductor X-Ray Detectors
- 1 January 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 19 (1) , 350-355
- https://doi.org/10.1109/tns.1972.4326531
Abstract
Metal-oxide-semiconductor (MOS) devices have been used for detecting low-energy (2 to 20 keV) x rays for incident fluences of 10-4 to 10-1 cal/cm2 (or dosage in the device of 103 to 106 rads) in a bent-crystal spectrometer application. An attractive feature of the detector is that the three functions of 1) detection, 2) memory, and 3) readout are integrated into one semiconductor chip.Keywords
This publication has 4 references indexed in Scilit:
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