Current Status of Fabrication and Integration of Ferroelectric-Gate Fet's
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structuresApplied Physics Letters, 1999
- Preparation of Bi4Ti3O12 Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor StructureJapanese Journal of Applied Physics, 1999
- Fabrication of PbZrxTi1-xO3 Films on Si Structures Using Y2O3 Buffer LayersJapanese Journal of Applied Physics, 1998
- Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride bufferIntegrated Ferroelectrics, 1998
- Current status and prospects of mfsfets and related devicesIntegrated Ferroelectrics, 1997
- Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structuresIEEE Electron Device Letters, 1997
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write OperationJapanese Journal of Applied Physics, 1997
- Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO2 Buffer LayerJapanese Journal of Applied Physics, 1995
- Ferroelectric memory FET with Ir/IrO2 electrodesIntegrated Ferroelectrics, 1995
- Neuron MOS binary-logic integrated circuits. I. Design fundamentals and soft-hardware-logic circuit implementationIEEE Transactions on Electron Devices, 1993