Preparation of Bi4Ti3O12 Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4S) , 2281-2284
- https://doi.org/10.1143/jjap.38.2281
Abstract
Pt/Bi4Ti3O12(001)/Bi2SiO5(100)/Si(100) structures have been fabricated by the metalorganic chemical vapor deposition (MOCVD) at 500°. Bi2SiO5 film is used as a buffer layer to grow ferroelectric Bi4Ti3O12 films because of its relatively high dielectric constant (ε=30). The memory window has a C-V characteristic of about 0.8 V, and the retention time estimated by the zero-bias capacitance for the Pt/100-nm-Bi4Ti3O12/30-nm-Bi2SiO5/Si/Al structure is more than 11 days.Keywords
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