Optical Phonon-Assisted Tunneling in Double Quantum-Well Structures
- 1 January 1989
- proceedings article
- Published by Optica Publishing Group
Abstract
Using subpicosecond time-resolved luminescence spectroscopy, we have investigated tunneling of electrons in a double quantum well structure. The sample is a p-i-n diode, which contains two GaAs quantum wells of different thicknesses separated by a 55 Å Al0.65Ga0.35As barrier layer. We observe a large increase of the tunneling rates when the two lowest energy subbands of the coupled wells are separated by more than an optical phonon energy. These results demonstrate that phonon-assisted tunneling play a significant role in this structure and in the carrier transport of related multiple quantum well structures.Keywords
This publication has 5 references indexed in Scilit:
- Resonant Tunneling with Electron-Phonon Interaction: An Exactly Solvable ModelPhysical Review Letters, 1988
- Ultrafast luminescence spectroscopy using sum frequency generationIEEE Journal of Quantum Electronics, 1988
- Evidence for LO-phonon-emission-assisted tunneling in double-barrier heterostructuresPhysical Review B, 1987
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Raman investigation of anharmonicity and disorder-induced effects inepitaxial layersPhysical Review B, 1981