Resonant Tunneling with Electron-Phonon Interaction: An Exactly Solvable Model
- 19 September 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (12) , 1396-1399
- https://doi.org/10.1103/physrevlett.61.1396
Abstract
The probability for resonant tunneling through a quantum well is calculated for a model including electron-phonon coupling. The interaction of the tunneling electron with optic phonons produces resonant transmission sidebands, which are readily observable in characteristics. Our results confirm the recent experimental observation of phonon-assisted resonant tunneling in GaAs.
Keywords
This publication has 13 references indexed in Scilit:
- Evidence for LO-phonon-emission-assisted tunneling in double-barrier heterostructuresPhysical Review B, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Quantum well oscillatorsApplied Physics Letters, 1984
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Comments on core-hole lifetime effects in deep-level spectroscopiesPhysical Review B, 1978
- Emission spectra and phonon relaxationPhysical Review B, 1977
- Tunneling in a finite superlatticeApplied Physics Letters, 1973
- Singularities in the X-Ray Spectra of MetalsPhysical Review B, 1970