Carrier dephasing in the gain region of an inverted semiconductor

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Abstract
The polarization dephasing time has been measured across the gain region, at the transparency point, and into the absorption region of an optically excited GaAs multiple-quantum-well sample using spectral hole burning and degenerate four-wave mixing techniques. We observe strongly energy-dependent dephasing rates with a minimum at the crossover from gain to absorption. Numerical results for the microscopically calculated carrier-carrier scattering rates for a two-component electron-hole plasma in quantum wells show fair agreement with the experimental findings.