Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si
- 5 March 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (10) , 949-951
- https://doi.org/10.1063/1.102633
Abstract
We demonstrate the drift of a donor‐passivating hydrogen species under the action of the electric field in the depletion region of a reverse‐biased Au/n‐Si Schottky diode hydrogenated by exposure to a low‐frequency discharge. The redistribution is explained by the unidirectional drift of a negatively charged passivating species and is confirmed by secondary‐ion mass spectrometry profiling in deuterated diodes. The results are consistent with the presence of an acceptor level for hydrogen in n‐type Si, and are analogous to the situation in p‐type Si where drift experiments reveal the existence of positively charged hydrogen donor species.Keywords
This publication has 12 references indexed in Scilit:
- Real-time observations of hydrogen drift and diffusion in siliconApplied Physics Letters, 1988
- Hydrogen in Crystalline SemiconductorsAnnual Review of Materials Science, 1988
- Hydrogen immobilization in siliconjunctionsPhysical Review B, 1988
- Theory of Hydrogen Diffusion and Reactions in Crystalline SiliconPhysical Review Letters, 1988
- Evaluation of semiempirical quantum-chemical methods in solid-state applications. I. Molecular-cluster calculations of defects in siliconPhysical Review B, 1987
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processingJournal of Materials Research, 1987
- Hydrogen Injection Into P-Type Silicon By Chemical EtchingMRS Proceedings, 1987
- Field-enhanced neutralization of electrically active boron in hydrogen implanted Schottky diodesApplied Physics A, 1986
- Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated siliconApplied Physics Letters, 1985