Electrostatics of coaxial schottky-barrier nanotube field-effect transistors
- 8 September 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nanotechnology
- Vol. 2 (3) , 175-180
- https://doi.org/10.1109/tnano.2003.817228
Abstract
Analytical and numerical methods are used to solve Poisson's equation for carbon nanotube field-effect transistors (FETs) with a cylindrical surrounding gate and Schottky-barrier contacts to the source and drain. The effect on the nanotube potential profile of varying the work functions of all the electrodes, and the thickness and permittivity of the gate dielectric, is investigated. From these results, the general trends to be expected in the above-threshold drain current-voltage characteristics of Schottky-barrier nanotube FETs are predicted. The unusual possibility of simultaneous electron and hole contributions to the drain current is revealed. The subthreshold characteristics are computed from a solution to Laplace's equation, and the subthreshold slope is found to depend on gate dielectric thickness in a different manner from that in other FETs.Keywords
This publication has 17 references indexed in Scilit:
- Towards a compact model for Schottky-barrier nanotube FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Electrically Induced Optical Emission from a Carbon Nanotube FETScience, 2003
- Field-Modulated Carrier Transport in Carbon Nanotube TransistorsPhysical Review Letters, 2002
- Transport through the interface between a semiconducting carbon nanotube and a metal electrodePhysical Review B, 2002
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- Single-walled carbon nanotube electronicsIEEE Transactions on Nanotechnology, 2002
- Schottky Barriers in Carbon Nanotube HeterojunctionsPhysical Review Letters, 2000
- Role of Fermi-Level Pinning in Nanotube Schottky DiodesPhysical Review Letters, 2000
- Novel Length Scales in Nanotube DevicesPhysical Review Letters, 1999
- Room-temperature transistor based on a single carbon nanotubeNature, 1998