Transport through the interface between a semiconducting carbon nanotube and a metal electrode
- 21 August 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (7) , 073307
- https://doi.org/10.1103/physrevb.66.073307
Abstract
We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p-doped and the n-doped region is shown to depend mainly on the difference between the electrode Fermi level and the band gap of carbon nanotubes. We quantitatively show how the gate/nanotube distance is important to get large on-off ratios. We explain the bend of the current versus gate voltage as the transition from a thermal-activation region to a tunneling region. A good agreement is obtained with experimental results for carbon nanotubes field-effect transistors.Keywords
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