Fermi-Level Alignment at Metal-Carbon Nanotube Interfaces: Application to Scanning Tunneling Spectroscopy
- 6 December 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 83 (23) , 4844-4847
- https://doi.org/10.1103/physrevlett.83.4844
Abstract
At any metal-carbon nanotube interface there is charge transfer and the induced interfacial field determines the position of the carbon nanotube band structure relative to the metal Fermi level. In the case of a single-wall carbon nanotube supported on a gold substrate, we show that the charge transfers induce a local electrostatic potential perturbation which gives rise to the observed Fermi-level shift in scanning tunneling spectroscopy measurements. We also discuss the relevance of this study to recent experiments on carbon nanotube transistors and argue that the Fermi-level alignment will be different for carbon nanotube transistors with low resistance and high resistance contacts.Keywords
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This publication has 31 references indexed in Scilit:
- Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubesApplied Physics Letters, 1999
- Interface states at semiconductor junctionsReports on Progress in Physics, 1999
- Manipulation of Individual Carbon Nanotubes and Their Interaction with SurfacesThe Journal of Physical Chemistry B, 1998
- Static polarizabilities of single-wall carbon nanotubesPhysical Review B, 1995
- On the physics of metal-semiconductor interfacesReports on Progress in Physics, 1990
- Dielectric screening in semiconductorsPhysical Review B, 1988
- Heterojunction band offsets and the interface dielectric functionPhysical Review B, 1987
- Schottky barrier formation. I. Abrupt metal-semiconductor junctionsJournal of Physics C: Solid State Physics, 1983
- The metal-semiconductor interface: Si (111) and zincblende (110) junctionsJournal of Physics C: Solid State Physics, 1977
- Surface-induced charge disturbances in filled bandsPhysical Review B, 1974