Heterojunction band offsets and the interface dielectric function
- 15 October 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (11) , 5920-5924
- https://doi.org/10.1103/physrevb.36.5920
Abstract
We have used a consistent tight-binding approach to analyze the dielectric behavior of bulk and interface semiconductors. These results have been related to the screening factor appearing in the theory of heterojunction band offsets. The results of this paper give strong support to the consistent tight-binding method used to analyze heterojunction band discontinuities.Keywords
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