Schottky barrier formation. I. Abrupt metal-semiconductor junctions

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Abstract
A realistic self-consistent calculation is presented of an abrupt metal-semiconductor junction by means of a tight-binding approach. A specific Si-Ag junction has been considered, and the charge neutrality level as well as the barrier height have been determined in good agreement with experiments. For a general junction the authors show that the interface properties depend essentially on the characteristics of the first metal layer and its interaction with the semiconductor.