Abruptness of Semiconductor-Metal Interfaces

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Abstract
A predictive relation between reacted interface width and heat of interface reaction is presented for III-V—compound-semiconductor-metal interfaces. Soft-x-ray photoemission measurements reveal that the thickness of chemically reacted species and the extent and stoichiometry of atomic interdiffusion are determined by the strength and nature of metal-semiconductor bonding. Chemical bond strength directly influences the macroscopic electronic properties as shown by transport measurements.