Atomic Modulation of Interdiffusion at Au-GaAs Interfaces
- 10 March 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (10) , 667-670
- https://doi.org/10.1103/physrevlett.44.667
Abstract
Monolayer thicknesses of Al are observed at Au-GaAs(110) interfaces modulate the relative Ga to As diffusion into Au by over an order of magnitude. This new phenomenon at compound semiconductor/metal interfaces reveals a systematic relationship between the local atomic bonding and the extended chemical structure of the interface.Keywords
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