Energy barriers and interface states at heterojunctions
- 1 February 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (4) , 731-749
- https://doi.org/10.1088/0022-3719/12/4/018
Abstract
In this paper homopolar and heteropolar heterojunctions have been analysed. The energy band discontinuities at heteropolar heterojunctions have been obtained self-consistently by analysing the charge induced at the interface. The crucial point of the analysis is the flow of charge between both semiconductors as a function of the difference in energy between their charge neutrality levels. For homopolar heterojunctions interface relaxation is discussed and it appears to be a function of the state of occupation of the interface. The analysis gives a relaxation of 4% for the 111-GeGaAs interface.Keywords
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