Memory performance and retention of an all-organic ferroelectric-like memory transistor
- 24 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (2) , 69-71
- https://doi.org/10.1109/led.2004.841186
Abstract
We have built a nonvolatile memory field-effect transistor (FET)-based on organic compounds. The gate-insulating polymer features ferroelectric-like characteristics when spun from solution into an amorphous phase. Thus, the memory transistor is built using techniques developed for organic transistors without requiring high temperature annealing steps. The memory exhibits channel resistance modulations and retention times close in performance to inorganic ferroelectric FETs (FEFETs), yet at a fraction of the cost.Keywords
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