Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistor

Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a ${\mathrm{Pb(Zr}}_{\text{0.52}}{\mathrm{Ti}}_{\text{0.48}}){\mathrm{O}}_3/{\mathrm{Al}}_2{\mathrm{O}}_3$ gate stack on $n$ -type epitaxial channel layer and $p$ -type substrate of 4H-SiC. A memory window, as wide as 5 V, has been observed in the drain current and the ferroelectric gate voltage transfer characteristics. The transistor showed memory effect from room temperature up to 200 °C, whereas stable transistor operation was observed up to 300 °C. The retention of remnant polarization was preserved after ${\text{2×10}}^4$ s at 150 °C with no bias on the gate.