The Influence of Hydrogen on CVD-Growth on Si(111) Surfaces
- 1 January 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 159 (1) , 39-51
- https://doi.org/10.1002/1521-396x(199701)159:1<39::aid-pssa39>3.0.co;2-n
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Adsorbate Induced Change of Equilibrium Surface during Crystal Growth: Si on Si(111)/HPhysical Review Letters, 1996
- Nucleation behavior in molecular beam and chemical vapor deposition of silicon on Si(111)-(7×7)Journal of Vacuum Science & Technology A, 1996
- Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?Journal of Crystal Growth, 1994
- H coverage dependence of Si(001) homoepitaxyPhysical Review Letters, 1994
- Effect of H on Si molecular-beam epitaxyJournal of Applied Physics, 1993
- Mechanisms of disilane decomposition on Si(111)-7 × 7Surface Science, 1990
- Modulated molecular beam scattering of disilane on siliconSurface Science, 1990
- Kinetics and mechanics of Si2H6 surface decomposition on SiJournal of Vacuum Science & Technology A, 1990
- Interaction ofwith a Si(111)-77 surfacePhysical Review B, 1989
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984