Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 338-343
- https://doi.org/10.1016/0022-0248(94)90436-7
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- π-bonded dimers, preferential pairing, and first-order desorption kinetics of hydrogen on Si(100)–(2×1)The Journal of Chemical Physics, 1992
- Advances in remote plasma-enhanced chemical vapor deposition for low temperature In situ hydrogen plasma clean and Si and Si1-xGex epitaxyJournal of Electronic Materials, 1992
- Dissociative chemisorption mechanisms of disilane on Si(100)-(2×1) and H-terminated Si(100) surfacesChemical Physics Letters, 1991
- Gas source molecular-beam epitaxy of Si and SiGe using Si2H6 and GeH4Journal of Applied Physics, 1991
- Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentalsIBM Journal of Research and Development, 1990
- Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1Journal of Vacuum Science & Technology A, 1990
- Selective growth condition in disilane gas source silicon molecular beam epitaxyApplied Physics Letters, 1988
- Gas source silicon molecular beam epitaxy using disilaneApplied Physics Letters, 1988
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985