Interaction of technology and performance in complementary symmetry MOS integrated circuits
- 1 February 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 5 (1) , 24-29
- https://doi.org/10.1109/JSSC.1970.1050061
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Technology and performance of integrated complementary MOS circuitsIEEE Journal of Solid-State Circuits, 1969
- Thin-film silicon-on-sapphire deep depletion MOS transistorsIEEE Transactions on Electron Devices, 1966
- An analysis of deep depletion thin-film MOS transistorsIEEE Transactions on Electron Devices, 1966
- Integrated memory using complementary field-effect transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1966
- A solid to solid diffusion techniqueIEEE Transactions on Electron Devices, 1963