Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
- 1 March 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 48 (3) , 416-419
- https://doi.org/10.1109/16.906429
Abstract
Metal-insulator-semiconductor field effect transistors (MISFETs) from surface-passivated undoped AlGaN/GaN heterostructures on sapphire were fabricated. Measured static output characteristics includes full channel currents (I/sub dss/) of roughly 750 mA/mm with gate-source pinchoff voltages of -10 V and peak extrinsic transconductancies (g/sub m/) of 100-110 mS/mm. Increased surface roughness resulting from a gate recess process to reduce the pinchoff voltage introduces gate leakage currents in the micro-amps regime. With evidence for reduced dc-to-rf dispersion from pulsed gate transfer characteristics, these devices at 4 GHz with 28.0 V bias generated maximum output power densities of 4.2 W/mm with 14.5 dB of gain and 36% power added efficiency.Keywords
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