An optical and transmission electron microscopy study of deformation-induced defects in 6H-SiC
- 1 September 1998
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 78 (3) , 737-746
- https://doi.org/10.1080/01418619808241933
Abstract
Deformation tests were conducted on 6H-SiC in an orientation favourable for activation of the (2110)(0001) slip system. Tests were conducted at temperatures between 550°C and 1400°C and at a strain rate of 3.1 × 10−5 s−1. Subsequent to the deformation tests, optical and transmission electron microscopy were used to study the deformation-induced defects such as stacking faults, deformation kinks, and cracks. Based on these observations, a mechanism for the formation of deformation kinks, and nucleation and propagation of cracks, and the temperature dependence of this mechanism is proposed.Keywords
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