Correlation between the Cu-related luminescent center and a deep level in silicon

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Abstract
The correlation between the copper-induced deep centers with Ev+0.1 eV and the appearance of luminescent copper centers, leading to a characteristic line spectrum with the most intense Cu00 no-phonon line at 1.014 eV, has been examined using deep level transient spectroscopy (DLTS) and photoluminescence (PL). Concentrations of the 0.1 eV copper centers ranging from 1011 to about 1014 cm−3 were obtained by a copper contamination treatment of floating zone p-type silicon samples without quenching. The dependence of the Cu00 line intensity on the excitation power in the transition region to intensity saturation was used to determine the saturation intensity ICusat, which represents the concentration of luminescent copper centers. The saturation intensities and therefore also the concentrations of luminescent copper centers, show a linear dependence on the concentrations of the 0.1 eV deep centers with good correlation, suggesting that the same Cu-induced centers are detected by DLTS and PL.