Deep levels of copper in silicon

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Abstract
Defect impurity levels have been examined in copper‐diffused p‐and n‐type silicon using deep level transient spectroscopy. Levels at Ev+0.09, Ev+0.23, and Ev+0.42 eV have been observed in both types of material, although the deeper levels were only oberved in n‐type material after post‐diffusion annealing at 200 °C. Associated with the appearance of these levels in n‐type material was another level at Ec−0.16 eV. This may be a further charge state of the center responsible for the Ev+0.23 eV and Ev+0.42 eV levels or the two centers may be decomposition products of a thermally unstable complex. Luminescence measurements have revealed the previously reported Cu‐Cu spectrum in all the copper‐diffused samples. The occurrence of this signal could not be correlated with the presence of the levels at Ev+0.23, Ev+0.42, or Ec−0.16 eV; this leaves the center at Ev+0.09 eV as the likely origin of the signal.