Photocurrent deep level transient spectroscopy in silicon

Publisher Website
Google Scholar
Abstract
Photocurrent deep level transient spectroscopy (PCDLTS) is investigated as a technique for the detection of centers in the minority half of the band gap. The photocurrent and resulting peak shapes are analyzed and compared with experimental results obtained from gold-doped silicon diodes illuminated with different wavelength sources. It is shown that by suitable selection of the photon wavelength, reliable detection of levels in the minority half of the band gap is possible in long lifetime material. However, for centers with a large ratio of majority carrier capture cross section to minority carrier capture cross section, their detection in short lifetime material is likely to be more difficult, unless the material is thinned down and used with an appropriately matched photon source.