Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon
- 31 July 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (7) , 643-649
- https://doi.org/10.1016/0038-1101(82)90066-1
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Diffusion of gold in silicon: A new modelApplied Physics Letters, 1981
- Complex nature of gold-related deep levels in siliconPhysical Review B, 1980
- Observation of lifetime controlling recombination centres in silicon power devicesSolid-State Electronics, 1980
- Recombination in gallium phosphide via a deep state associated with nickelElectronics Letters, 1979
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- The electron capture cross section and energy level of the gold acceptor center in siliconJournal of Applied Physics, 1978
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross SectionsPhysical Review B, 1973
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970