Observation of lifetime controlling recombination centres in silicon power devices
- 29 February 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (2) , 129-132
- https://doi.org/10.1016/0038-1101(80)90148-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The electron capture cross section and energy level of the gold acceptor center in siliconJournal of Applied Physics, 1978
- Contrôle de l'élaboration des thyristors par thermocapacitance : caractérisation de centres recombinants induitsRevue de Physique Appliquée, 1976
- A correlation method for semiconductor transient signal measurementsJournal of Applied Physics, 1975
- On the determination of the minority carrier lifetime from the reverse recovery transient of pnR diodesSolid-State Electronics, 1975
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Quenched-in centers in silicon p+n junctionsSolid-State Electronics, 1974
- On the post-injection voltage decay of p-s-n rectifiers at high injection levelsSolid-State Electronics, 1972