On the post-injection voltage decay of p-s-n rectifiers at high injection levels

This publication has 20 references indexed in Scilit:

• Open circuit voltage decay behavior of junction devices
  Solid-State Electronics, 1970
• Observations on a method of determining the carrier lifetime in p+-ν-n+ diodes
  Solid-State Electronics, 1969
• On the effective carrier lifetime in p-s-n rectifiers at high injection levels
  Solid-State Electronics, 1969
• Notes on the theory of the forward characteristic of power rectifiers
  Solid-State Electronics, 1968
• The forward characteristic of silicon power rectifiers at high current densities
  Solid-State Electronics, 1968
• Recombination in silicon p−π−n diodes
  Solid-State Electronics, 1967
• An experimental determination of the carrier lifetime in p-i-n diodes from the stored carrier charge
  Solid-State Electronics, 1964
• The reverse transient behavior of semiconductor junction diodes
  IRE Transactions on Electron Devices, 1961
• On the Transient Behavior of Semiconductor Rectifiers
  Journal of Applied Physics, 1955
• Post-Injection Barrier Electromotive Force ofp−nJunctions
  Physical Review B, 1953