Multi-ion Screening in Uncompensated Semiconductors

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Abstract
We have developed a self-consistent multi-ion screening formalism which, unlike conventional treatments, explicitly accounts for the fact that free electrons cannot screen a given donor in a multi-ion system as effectively as they can screen the same donor in a single-ion system. In uncompensated, metallic Si:P at low temperatures, employment of the "multi-ion" screening length significantly improves the agreement between theoretical and experimental electron mobilities.