Asphericity and temperature dependence of the bond charge in silicon
- 1 September 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 107 (1) , K19-K23
- https://doi.org/10.1002/pssb.2221070145
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Temperature Dependence of Bond charge Vibration in SiliconPhysica Status Solidi (b), 1980
- X‐Ray Determination of Bond Charges in SiliconPhysica Status Solidi (b), 1980
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- On the experimental electron distribution in siliconSolid State Communications, 1974
- Diffraction studies of the (222) reflection in Ge and Si: Anharmonicity and the bonding electronPhysical Review B, 1974
- Temperature and pressure dependence of the Si(222) forbidden reflection and the vibration of the bonding chargePhysical Review B, 1974
- Bonding-Electron Distributions, Anharmonicity, and the Temperature Dependence of the Forbidden Si(442) ReflectionPhysical Review B, 1972
- Pseudopotential Calculations of Electronic Charge Densities in Seven SemiconductorsPhysical Review B, 1971
- Relativistic Calculation of Anomalous Scattering Factors for X RaysThe Journal of Chemical Physics, 1970
- Anharmonic vibration and forbidden reflexions in silicon and germaniumProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967