Temperature Dependence of Bond charge Vibration in Silicon
- 1 December 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 102 (2) , 503-508
- https://doi.org/10.1002/pssb.2221020208
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electronic properties, chemical bonding, and lattice dynamics of semiconductorsPublished by Springer Nature ,2007
- X‐Ray Determination of Bond Charges in SiliconPhysica Status Solidi (b), 1980
- On the dielectric response of solids II. Local field effects in the phonon-induced density change of a semiconductorPhysica Status Solidi (b), 1979
- Electron-density studies. III. A re-evaluation of the electron distribution in crystalline siliconActa Crystallographica Section A, 1978
- Valence charge density in grey tin: X-ray determination of the (222) "forbidden" reflection and its temperature dependencePhysical Review B, 1975
- Electronic Charge Densities and the Temperature Dependence of the Forbidden (222) Reflection in Silicon and GermaniumPhysical Review Letters, 1974
- Diffraction studies of the (222) reflection in Ge and Si: Anharmonicity and the bonding electronPhysical Review B, 1974
- The electron distribution in silicon - I. ExperimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1973
- Temperature Coefficient of the Refractive Index of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1970
- Covalent Bond in Crystals. I. Elements of a Structural TheoryPhysical Review B, 1968