Extraction of substrate current model parameters from device simulation
- 31 October 1994
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (10) , 1786-1788
- https://doi.org/10.1016/0038-1101(94)90232-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Impact ionization rate of electrons for accurate simulation of substrate current in submicron devicesSolid-State Electronics, 1993
- A simple method to characterize substrate current in MOSFET'sIEEE Electron Device Letters, 1984
- The effect of high fields on MOS device and circuit performanceIEEE Transactions on Electron Devices, 1984
- A simple two-dimensional model for IGFET operation in the saturation regionIEEE Transactions on Electron Devices, 1977