Structure of vapor-deposited Ge films as a function of substrate temperature
- 1 November 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11) , 7390-7396
- https://doi.org/10.1063/1.330107
Abstract
The structure of Ge films grown by thermal evaporation has been studied as a function of the deposition temperature Ts by X-ray diffraction, Raman scattering, and EXAFS (Extended X-ray Absorption Fine Structure) analysis. It is found that there is a temperature range where the material is microscopically heterogeneous and consists of crystallites embedded in an amorphous connective tissue. The dimension and the percentage of the ordered domains are determined, and the nature of the amorphous to polycrystalline transition is thoroughly investigated. The data support the hypothesis of the instability of the diamond structure for small crystallites.ufoffThis publication has 14 references indexed in Scilit:
- The one phonon Raman spectrum in microcrystalline siliconPublished by Elsevier ,2002
- Structural properties of silicon thin films deposited by flow dischargeJournal of Physics D: Applied Physics, 1981
- Raman scattering from small particle size polycrystalline siliconSolid State Communications, 1981
- EXAFS investigation of amorphous-to-crystal transition in GeSolid State Communications, 1981
- Bond charge model of amorphous tetrahedrally coordinated solidsJournal of Non-Crystalline Solids, 1980
- On the structure of simple inorganic amorphous solidsJournal of Physics C: Solid State Physics, 1979
- Surface influences of glass substrates on lattice parameters and phase transition temperature of evaporated Ge thin filmsPhysica Status Solidi (a), 1978
- Extended x-ray-absorption fine-structure technique. III. Determination of physical parametersPhysical Review B, 1975
- The amorphous–crystalline transition in germanium filmsPhysica Status Solidi (a), 1974
- Theory of the extended x-ray-absorption fine structurePhysical Review B, 1974