Low pressure metalorganic chemical vapor deposition of InGaP using tertiarybutylphosphine
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 114 (4) , 561-564
- https://doi.org/10.1016/0022-0248(91)90400-y
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous SourceJapanese Journal of Applied Physics, 1990
- MOCVD of Ga0.52In0.48P Using TertiarybutylphosphineJournal of Electronic Materials, 1989
- High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphineApplied Physics Letters, 1988
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988
- MOVPE growth of InP using isobutylphosphine and tert-butylphosphineJournal of Crystal Growth, 1986
- Organometallic vapor phase epitaxial growth of InP using new phosphorus sourcesApplied Physics Letters, 1986