OMVPE Growth and Characterization of GaInP on GaAs Using Tertiary Butylphosphine for the Phosphorous Source

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Abstract
GaInP layers were grown on GaAs substrates by organometallic vapor-phase epitaxy (OMVPE) at atmospheric pressure using trimethylgallium (TMGa), trimethylindium (TMIn) and much less toxic tertiary butylphosphine (TBP) as source gases. Fairly smooth surfaces were obtained at the growth temperature of 65O°C and at the V/III ratio of 78. The electrical and optical characteristics are comparable to those obtained by OMVPE using phosphine as the phosphorous source and far better than the previous results obtained by OMVPE with TBP. The undoped epitaxial layers showed n-type conductivity with electron concentrations of 2–3×1017 cm-3.