Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 367-373
- https://doi.org/10.1016/0022-0248(86)90325-8
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Effect of mismatch strain on band gap in III-V semiconductorsJournal of Applied Physics, 1985
- MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasersJournal of Crystal Growth, 1984
- Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1983
- OMVPE growth of GaInPJournal of Crystal Growth, 1983
- MOCVD-Grown Al0.5In0.5P–Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 KJapanese Journal of Applied Physics, 1982
- GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substratesJournal of Applied Physics, 1982
- Molecular beam epitaxial growth of InGaAlP on (100) GaAsJournal of Applied Physics, 1982
- Metalorganic vapor phase epitaxial growth of In1−xGaxPJournal of Crystal Growth, 1981
- Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxPJournal of Physics and Chemistry of Solids, 1976
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972