GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
- 1 October 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (10) , 6849-6851
- https://doi.org/10.1063/1.330023
Abstract
We have performed Gax In1−xP liquid phase epitaxial (LPE) growth on (100) GaAs substrates at a growth temperature of 785 °C. The P atom fraction in the growth melts was kept constant every LPE growth run. The lattice mismatch Δa⊥/a0 between the Gax In1−xP layer and GaAs substrate normal to the wafer surface and photoluminescence (PL) of the alloy layer were measured. It was found that Δa⊥/a0 and the PL peak energy vary linearly from +0.47 to −0.13% and from 1.869 to 1.921 eV at room temperature, depending on the Ga atom fraction in the growth melts, respectively. This means that the so‐called composition pulling phenomenon does not occur in LPE growth of Gax In1−xP on (100) GaAs substrates.This publication has 14 references indexed in Scilit:
- Lattice-Matched LPE Growth of In1-xGaxP1-yAsyLayers on (100) GaAs SubstratesJapanese Journal of Applied Physics, 1980
- Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InPJournal of Applied Physics, 1979
- Orientation effects in the LPE growth of GaInAsP quaternary alloysApplied Physics Letters, 1978
- The growth of GaxIn1−xAs on (100) InP by liquid-phase epitaxyApplied Physics Letters, 1978
- Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxPJournal of Crystal Growth, 1974
- Liquid phase epitaxial growth of GaxIn1−xPJournal of Electronic Materials, 1972
- Electronic Structure and Luminescence Processes in In1−xGaxP AlloysJournal of Applied Physics, 1971
- Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1971
- Calculation of the Ga-In-P Ternary Phase Diagram Using the Quasi-Chemical Equilibrium ModelJournal of the Electrochemical Society, 1970
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968