Microwave Power Applications of GalIium Arsenide Heterojunction Bipolar Transistors
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 0_148-0_155
- https://doi.org/10.1109/sarnof.1993.657970
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A 1-Watt, 8-14-GHz HBT amplifier with >45% peak power-added efficiencyIEEE Microwave and Guided Wave Letters, 1992
- CW measurement of HBT thermal resistanceIEEE Transactions on Electron Devices, 1992
- 0.7 W X-Ku-band high-gain, high-efficiency common base power HBTIEEE Microwave and Guided Wave Letters, 1991