Parasitic source and drain resistance in high-electron-mobility transistors
- 31 July 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (7) , 659-668
- https://doi.org/10.1016/0038-1101(85)90016-4
Abstract
No abstract availableFunding Information
- Office of Naval Research (OOO14-83-C-0347)
This publication has 3 references indexed in Scilit:
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- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969