Characterization of Au–n-InP Schottky diodes by EBIC
- 16 April 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 94 (2) , 713-718
- https://doi.org/10.1002/pssa.2210940236
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electron-beam measurements of minority-carrier lifetime distributions in ion-beam-damaged siliconJournal of Applied Physics, 1979
- Recombination in heavily doped planar diodesJournal of Applied Physics, 1979
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971
- The energy of electron-hole pair formation by X-rays in PbOJournal of Physics and Chemistry of Solids, 1961
- Backscattering of Kilovolt Electrons from SolidsPhysical Review B, 1954