He-implantation induced defects in Si studied by slow positron annihilation spectroscopy
- 15 February 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (4) , 2390-2397
- https://doi.org/10.1063/1.369555
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Momentum distributions of electron-positron pairs annihilating at vacancy clusters in SiPhysical Review B, 1998
- Helium in silicon: Thermal-desorption investigation of bubble precursorsPhysical Review B, 1997
- Positron-annihilation investigation of vacancy agglomeration in electron-irradiated float-zone siliconPhysical Review B, 1996
- Gettering of metals by voids in siliconJournal of Applied Physics, 1995
- Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in SiJapanese Journal of Applied Physics, 1995
- Vacancy-hydrogen interaction in H-implanted Si studied by positron annihilationPhysical Review B, 1994
- First-principles study of He in SiPhysical Review B, 1992
- Positron Studies of Gases and Gas Bubbles in MetalsMaterials Science Forum, 1992
- Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorptionPhysical Review B, 1991
- Positron trapping rates and their temperature dependencies in electron-irradiated siliconPhysical Review B, 1989