Vacancy-hydrogen interaction in H-implanted Si studied by positron annihilation
- 15 March 1994
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (11) , 7271-7280
- https://doi.org/10.1103/physrevb.49.7271
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorptionPhysical Review B, 1991
- Evidence for molecular hydrogen in single crystal siliconPhysica B: Condensed Matter, 1991
- Structure and evolution of the displacement field in hydrogen-implanted siliconPhysical Review B, 1990
- Hydrogen implantation into (100) silicon: A study of the released damageNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- Defect formation in H implantation of crystalline SiPhysical Review B, 1988
- SiO2/Si interface probed with a variable-energy positron beamApplied Physics Letters, 1987
- Hydrogen-implantation-induced damage in siliconPhysical Review B, 1987
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981