Identification of donors in GaAs by resonantly excited high-field magnetospectroscopy
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (5) , 1035-1045
- https://doi.org/10.1109/3.27997
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Donor identification in bulk gallium arsenideApplied Physics Letters, 1988
- Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescenceApplied Physics Letters, 1987
- A model for the neutral donor bound exciton system in InP at high magnetic fieldJournal of Physics C: Solid State Physics, 1984
- Identification of impurities in GaAs by the magneto-optical photoluminescent spectroscopy techniqueJournal of Applied Physics, 1984
- Identification of donors in vapor grown indium phosphideJournal of Applied Physics, 1984
- Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopyPhysical Review B, 1983
- Donor discrimination and bound exciton spectra in InPJournal of Applied Physics, 1983
- Photoluminescence studies of exciton-ionized donor complexes in high pusity epitaxial GaAsSolid State Communications, 1982