Identification of impurities in GaAs by the magneto-optical photoluminescent spectroscopy technique
- 15 March 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (6) , 1610-1613
- https://doi.org/10.1063/1.333422
Abstract
Three residual donors (Si, S, Ge) and three residual acceptors (Ge, C, Zn) have been identified simultaneously in a p‐type GaAs crystal. The donors were identified by the magneto‐optical photoluminescent spectroscopy technique. The Si donor has also been identified by the same technique in a relatively heavily doped sample (∼5×1015 cm−3) of GaAs. A residual S donor has also been identified in still another Si‐doped sample. These results demonstrate the versatility of the photoluminescence technique for materials characterization.This publication has 7 references indexed in Scilit:
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