Interaction between a monovacancy and a vacancy cluster in silicon
- 15 April 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (15) , 8767-8769
- https://doi.org/10.1103/physrevb.57.8767
Abstract
The interaction between two vacancies has been investigated in silicon by molecular-dynamics simulations. We introduce the concept of capture radius according to which the most stable configuration for a vacancy pair is a bound divacancy whenever the two defects are placed at distances smaller than We also investigate the trapping mechanism of a monovacancy at a vacancy complex and discuss the energetics of early stages of aggregation of small vacancy clusters.
Keywords
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